Bi mode ion implantation with non-parallel ion beams

专利摘要:
Generating an ion beam, measuring an antiparallel angle of the ion beam, tilting the wafer at a first angle, performing a first ion implantation at the first angle, tilting the wafer at a second angle, A method for implanting ions into a material, such as a semiconductor wafer, comprising performing a second ion implantation at a second angle. The first and second angles are opposite in sign relative to the reference direction and the magnitude is greater than or equal to the measured non-parallel angle. Preferably, the first and second implants are controlled to provide substantially the same amount of ion implantation in the workpiece.
公开号:KR20030042042A
申请号:KR10-2003-7006039
申请日:2001-10-11
公开日:2003-05-27
发明作者:안토니 레나우；조셉 씨. 올슨
申请人:베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.；
IPC主号:

专利说明:

Bi-mode ion implantation using non-parallel ion beams {BI MODE ION IMPLANTATION WITH NON-PARALLEL ION BEAMS}
[2] Ion implantation is a standard technique for introducing impurities that change conductivity into semiconductor wafers. The desired impurity material is ionized in the ion source, these ions are accelerated to form an ion beam with a given energy, and the ion beam is scanned onto the wafer surface. Ions with the energy of the beam can penetrate into the bulk semiconductor material and be inserted into the crystal lattice of the semiconductor material to form the desired conductive region.
[3] Ion implantation systems usually include ion sources for converting gaseous or solid materials into well-defined ion beams. Mass spectrometry removes unnecessary kinds of ions, and the ion beam is accelerated to the desired energy and injected into the target plane. The ion beam is distributed over the target area by beam scanning, target movement, or a combination of beam scanning and target movement. Ion implanters using a combination of beam scanning and target movement are disclosed in US Pat. No. 4,922,106 (1990, 5, 1) to Berrian et al.
[4] Delivering parallel ion beams to semiconductor wafers is an important requirement for many applications. Parallel ion beams have parallel ion trajectories across the semiconductor wafer surface. When the ion beam is scanned, the scanned beam is required to maintain parallelism on the wafer surface. Parallel ion beams prevent the incident ions from channeling in the crystal structure or allow uniform channeling to occur when channeling is required. In general, a series ion implanter is used when high levels of beam parallelism are required.
[5] In one way, the beam appears scanned one-dimensionally and diverges from a point called the scan origin. The scanned beam then passes through an ion optical element that collects light. The ion optical element converts the diverging ion trajectory into a parallel ion trajectory and transfers the same to the semiconductor wafer. Condensing is performed using angle correcting magnets or electrostatic lenses. The angle correction magnet deflects and condenses the scanned ion beam. Parallelism is achieved with electrostatic lenses, but there may be a drawback of energy pollution.
[6] The ion beam output from the angle correction magnet or other light collecting element may be parallel, convergent or divergent according to the ion beam parameter and the light collecting element parameter. If an angle correction magnet is used, parallelism can be adjusted by changing the magnetic field of the angle correction magnet. Angle correction magnets typically vary both parallelism and deflection angle, or beam direction, with a single magnetic field adjustment. Ion implanters are often required to drive various other ion species and ion energies. If the beam parameters change, readjustment of the angle correction magnet is necessary to restore beam parallelism.
[7] The requirement of beam parallelism readjustment adds complexity and delays to ion implanter operation. In addition, angle correction magnets or other ion optics used to generate parallel ion beams increase the cost of the ion implanter and increase the length of the ion implanter beamline.
[8] Accordingly, there is a need for ion implantation methods and apparatus that mitigate ion implantation uniformity across the semiconductor wafer surface while the beam parallelism requirements are relaxed.
[1] FIELD OF THE INVENTION The present invention relates to systems and methods for ion implantation of semiconductor wafers or other process materials, and in particular, methods and apparatus for achieving uniform ion implantation on the surface of semiconductor wafers using nonparallel ion beams. It is about.
[15] 1 is a schematic diagram of an ion implanter suitable for practicing the present invention.
[16] FIG. 2 is a schematic diagram illustrating the operation of an angle correction magnet when having a relatively large bend angle and converging ion trajectory. FIG.
[17] 3 is a schematic diagram illustrating the operation of an angle correction magnet in the case of having a relatively small bend angle and diverging ion trajectory.
[18] 4 is a flow chart of an ion implantation process according to an embodiment of the present invention.
[19] 5 is a schematic diagram illustrating a two-mode ion implantation in accordance with an embodiment of the present invention.
[20] 6 is a table showing an example of uniformity of implantation angles obtained by two-mode ion implantation.
[21] 7 A and B are schematic diagrams showing examples of apparatus for measuring beam parallelism.
[22] 8 A and B are graphs showing the beam detector output as a function of beam profiler position for the beam conditions shown in A and B of FIG. 7, respectively.
[23] 9 illustrates a conventional ion implantation using a non-parallel ion beam.
[9] According to a first aspect of the invention, a method of implanting ions into a workpiece is provided. The method comprises the steps of generating an ion beam, measuring an antiparallel angle of the ion beam, performing a first implant into the workpiece oriented at a first angle, and performing a second on the workpiece oriented at a second angle. Performing an injection. The first and second angles are opposite each other with respect to the reference direction, and the magnitude is greater than the measured non-parallel angle.
[10] In one embodiment, the reference direction is in the direction of the ion beam in the workpiece. In another embodiment, the reference direction consists of a selected implant angle with respect to the direction of the ion beam in the workpiece.
[11] Preferably, the first and second implants are controlled to provide substantially the same ion dose into the material. The material may comprise a semiconductor wafer. In a preferred embodiment, the first and second angles are the same size as the measured non-parallel angle.
[12] In a first embodiment, an ion beam is generated using a paralleling device. In a second embodiment, the ion beam is generated without using a parallelizing device.
[13] According to another feature of the invention, a method of implanting ions into a semiconductor wafer is provided. The method includes generating an ion beam, measuring an antiparallel angle of the ion beam, tilting the wafer at a first angle, performing a first implant at the first angle, and Tilting the wafer at two angles, and performing a second implant at the second angle. The first and second angles are opposite each other with respect to the reference direction, and the magnitude is greater than the measured non-parallel angle.
[14] According to another feature of the invention, an apparatus for implanting ions into a semiconductor wafer is provided. The apparatus comprises: means for generating an ion beam, means for measuring an antiparallel angle of the ion beam, means for tilting the wafer at a first angle, means for performing a first implant at the first angle, Means for tilting the wafer at a second angle, and means for performing a second implant at the second angle. The first and second angles are opposite each other with respect to the reference direction, and the magnitude is greater than the measured non-parallel angle.
[24] A simplified block diagram of an example of an ion implanter suitable for constructing the present invention is shown in FIG. The ion beam generator 10 generates an ion beam of the desired species, accelerates the ions of the ion beam to the desired energy, performs mass / energy analysis of the ion beam to remove energy and mass contamination, and energy and mass contamination levels This low, energetic ion beam 12 is supplied. The scanning system 16, including the syringe 20 and the angle corrector 24, deflects the ion beam 12 to produce a scanned ion beam 30 having parallel or nearly parallel ion trajectories. The end station 32 includes a plate 36 that supports the semiconductor wafer 34 or other process material on the path of the scanned ion beam 30 to inject the desired species of ions into the semiconductor wafer 34. The ion implanter may additionally include components well known to those skilled in the art. For example, the end station 32 typically includes an automated wafer control device, a dose measurement system, an electron flood gun, etc., which inserts the wafer into the ion implanter and removes the wafer after implantation. It should be noted that the entire path through which the ion beam passes during ion implantation is a vacuum.
[25] The main components of the ion beam generator 10 include an ion beam source 40, a source filter 42, an acceleration / deceleration column 44, and a mass analyzer 50. The source filter 42 is preferably placed in close proximity to the ion beam source 40. Acceleration / deceleration column 44 is located between source filter 42 and mass spectrometer 50. The mass spectrometer 50 includes a mask 54 having a dipole analysis magnet 52 and a resolving aperture 56.
[26] The scanner 20, which may be an electrostatic scanner, deflects the ion beam 12 to produce a scanned ion beam having an ion trajectory emanating from the scanning origin 60. Scanner 20 may include spaced apart scan plates connected to a scan generator. The scan generator applies a scan voltage waveform, such as a sawtooth wave, to scan the ion beam according to the electric field between the scan plates.
[27] The angle corrector 24 is configured to deflect ions in the scanned ion beam to produce a scanned ion beam 30 with parallel ion trajectories. In particular, the angle corrector 24 may include pole pieces 26 spaced apart to form a gap and a magnet coil (not shown) coupled to the power source 28. The scanned ion beam passes through the gap between the pole pieces 26 and is deflected according to the magnetic field in the gap. The magnetic field can be adjusted by varying the current flowing through the magnet coil. Beam scanning and beam focusing are performed in a selected plane, such as a horizontal plane.
[28] In the embodiment of FIG. 1, the end station 32 includes a beam parallel and direction measurement system 80. System 80 measures beam parallelism and direction as described below. The end station 32 also includes a tilt mechanism for tilting the wafer support table 36 with respect to the scanned ion beam 30. In one embodiment, the tilt mechanism 84 may tilt the wafer support table 36 about two orthogonal axes.
[29] One example of the operation of the angle corrector 24 is shown in FIGS. 2 and 3. As shown, the pole piece 26 of the angle corrector 24 is wedge shaped or similar, such that different ion trajectories have different path lengths across the gap between the pole pieces. In Fig. 2, a relatively high intensity magnetic field is applied. The ion trajectory has a relatively large bend angle and can converge as it leaves the angle corrector 24. In the embodiment of Figure 3, a relatively small intensity magnetic field is applied. The ion trajectory has a relatively small bend angle and can diverge as it leaves the angle corrector 24. Thus, the scanned ion beam 30 is incident on the wafer plane 70 at a positive angle 72 with respect to the normal of the wafer plane 70 in the embodiment of FIG. 2 and in the embodiment of FIG. 3. Incident on the wafer plane 70 at a negative angle 74 with respect to the normal of 70. Parallel or near parallel ion trajectories can be generated by appropriately adjusting the magnetic field in the angle corrector 24. In general, however, the magnetic field that provides the best parallelism does not necessarily cause the scanned ion beam 30 to enter vertically on the wafer plane 70.
[30] A flow chart for a process of implanting ions into a workpiece in accordance with an embodiment of the present invention is shown in FIG. In step 100, an ion beam is generated and delivered through the beamline of the ion implanter. As shown in FIG. 1, ion beam 12 is generated by ion beam generator 12 and delivered to end station 32 via scanner 20 and angle corrector 24.
[31] In step 102, the parallelism of the ion beam is measured at or near the plane where the ion beam is incident on the semiconductor wafer or material. The parallelism measurement provides an antiparallel angle of the ion beam, and in particular, typically provides a half angle of convergence or divergence of the ion beam. The angle to the measured nonparallel represents the maximum deviation of the ion beam trajectory from the center ray of the ion beam. An example of a technique for measuring the parallelism of an ion beam is described below in connection with A, B in FIG. 7 and A, B in FIG. The nonparallelism of ion beam 130 with half angle 132 of divergence is shown in FIG. 5. The divergence amount of the ion beam 130 is exaggerated in FIG. 5 for understanding. The parallelism of the beam is measured in the scanning and focusing plane of the ion beam.
[32] Referring again to FIG. 4, the wafer is tilted at a first two-mode angle, + x, with respect to the reference direction in step 104. As shown in FIG. 1, the tilt mechanism 84 is used to tilt the wafer support table 36 with respect to the scanned ion beam 30. The first two-mode angle is defined below. In step 106, a first ion implantation is performed on the wafer 140 tilted at a first two-mode angle. In step 108, the wafer is tilted at a second two-mode angle, -y, with respect to the reference direction, defined below. In step 110, a second ion implantation is performed 110 on the tilted wafer at a second two-mode angle. Preferably, the first ion implantation of step 106 and the second ion implantation of step 110 have the same energy and dose to ensure uniform ion implantation on the surface of the semiconductor wafer.
[33] The first two-mode angle + x and the second two-mode angle -y are opposite in sign relative to the reference direction and are equal to or greater in magnitude than the measured non-parallel angle. In describing the reference direction, it is useful to consider the so-called "injection angle" which is the angle between the incident ion beam and the normal to the wafer surface. Implant angles, typically within 0 ° to 7 °, are used to control the channeling of strong ions in the crystal lattice of the semiconductor wafer.
[34] In the simple case where the implant angle is 0 °, the reference direction of the first and second two-mode angles is the direction of the ion beam. In this case, the wafer is tilted at two-mode angles of opposite sign with respect to the incident ion beam as shown in FIG. 5. Wafer 140 is tilted at a first two-mode angle 142 relative to wafer plane 134 for first ion implantation and a second two-mode angle relative to wafer plane 134 for second ion implantation. Tilted to 144. The angles 142 and 144 are opposite in sign to the wafer plane 134 and, in magnitude, equal to or greater than the non-parallel measurement angle 132 of the ion beam 130. Preferably, the angles 142 and 144 are close to the substantial magnitude of the measured non-parallel angle. In the preferred embodiment, the angles 142 and 144 are equal to the magnitude of the measured non-parallel angle. However, in general, the angles 142 and 144 need not be the same size.
[35] The non-zero ion implantation angle may be set to tilt the wafer in a direction parallel to the scanning and focusing plane, that is, the plane of FIG. 5, and may be set to tilt the wafer in a direction orthogonal to the scanning and focusing plane. Where a non-zero ion implantation angle is set to tilt the wafer in a direction orthogonal to the scanning and focusing plane, the reference direction for the first and second angles is the direction of the ion beam as shown in FIG. 5 and described above. Where a non-zero ion implantation angle is set to tilt the wafer in a direction parallel to the scanning and focusing plane, the reference direction is perpendicular to the direction in which the wafer is tilted at the selected ion implantation angle. In this case, the first ion implantation is performed at a first two-mode angle with respect to the selected ion implantation angle, and the second ion implantation is performed at a second two-mode angle with respect to the selected ion implantation angle. If the first and second two-mode angles are the same size as the measured non-parallel angle, the first ion implantation is performed at an angle plus the measured non-parallel angle and the second ion implantation is selected. The nonparallel angle measured at the ion implantation angle is subtracted. For example, assume a selected ion implantation angle of 7 ° and an measured non-parallel angle of 1 °. In this case, the first two-mode ion implantation (step 106) is performed at a tilt angle of 7 ° + 1 ° = 8 °, and the second two-mode ion implantation (step 110) is 7 ° -1 ° = 6 It is carried out with a tilt angle of °. It can be appreciated that this method can be performed at any selected ion implantation angle and two-mode angles. In addition, the order of the first and second ion implantation may be reversed.
[36] The average effect of bimodal ion implantation in accordance with the present invention is described with reference to FIG. In the example of FIG. 6, the desired implant angles are 0 ° and the non-parallel ion beam is assumed to have a non-parallel measurement angle of 1 °. In a first two-mode implant, the wafer 140 of FIG. 5 is tilted at a first two-mode angle 142 of 1 ° relative to the wafer plane 134. As shown in FIG. At the angle, the left side of the wafer 140 is ion implanted at an angle of 2 °, the center of the wafer 140 is ion implanted at an angle of 1 °, and the right side of the wafer 140 is ion implanted at an angle of 0 °. In a second two-mode implant, the wafer 140 is tilted at a second two-mode angle 144 of −1 ° relative to the wafer plane 134. As shown in FIG. 6, at this tilt angle, the left side of the wafer 140 is ion implanted at an angle of 0 °, the center of the wafer 140 is ion implanted at an angle of −1 °, and the wafer 140 The right side is ion implanted at an angle of -2 °. As shown in FIG. 6, the average of two injections is a uniform angle of 1 ° across the wafer surface. Determining the average of the first and second bimodal implants is based on the assumption that ion implants at the same emboss and emboss are equal.
[37] A conventional single mode implantation using nonparallel ion beam is schematically illustrated in FIG. 9. A non-parallel ion beam 180 having a non-parallel angle 182 is used to ion implant the wafer 184 at normal incidence. The conventional ion implantation technique shown in FIG. 9 causes a change in the incident angle of the ion beam across the wafer surface. Specifically, an ion beam having a non-parallel angle of 1 ° has an incidence angle of + 1 ° at the left side of the wafer, an incidence angle of 0 ° at the center of the wafer, and a grain angle of -1 ° at the right side of the wafer. Thus, the angle of incidence varies by 1 ° over the wafer surface. In some applications this change in angle of incidence is not allowed.
[38] An example of a technique for measuring ion beam parallelism is described with reference to A and B in FIG. 7 and A and B in FIG. 7A and 7B are schematic diagrams showing the measurement of several ion beams with one beam profiler and two beam detectors. 8A and 8B are graphs showing the output of the beam detector as a function of the profiler position.
[39] As shown in FIGS. 7A and 7, ion beam parallelism is achieved using movable beam profilers and spaced beam detectors 152, 154 corresponding to beam parallelism and direction measurement system 80 (FIG. 1). Is measured. Beam profiler 150 may be any device that can partially block the ion beam and move laterally with respect to the ion beam. For example, detectors 152 and 154 may be Faraday cups that generate an electrical output signal in response to an incident ion beam. Profiler 150 blocks a portion of the ion beam as it moves across the ion beam to generate ion beam shadows. The beam shadow moves across the detectors 152, 154 to produce an output signal in the form of a negative traveling output current pulse.
[40] As shown in FIG. 7A, a parallel scanning ion beam 160 is vertically incident on the wafer plane 170. Detectors 152 and 154 produce output pulses as shown in FIG. 8A when the profiler is placed in alignment with each detector. The profiler position from which the detector output pulses are generated can be used to determine that ion beam 160 has a parallel trajectory and is perpendicular to wafer plane 170.
[41] Referring to FIG. 7B, the diverging ion beam 162 is vertically incident on the wafer plane 170. In this case, when profiler 150 is located to the right of detector 152, detector 152 generates an output pulse as shown in B of FIG. 8, and profiler 150 is to the left of detector 154. The detector 154 generates an output pulse when located at. The profiler position at which the output pulse can be generated can be used to determine the divergence angle of the ion beam 162. In response to a converging ion beam (not shown), the detector 152 generates an output pulse when the profiler is located to the left of the detector 152, and the detector 154 causes the profiler 150 to detect the detector 154. Generates an output pulse when positioned to the right of. The profiler position at which the detector output pulse is generated can be used to determine the convergence angle of the ion beam. Further details regarding techniques for measuring ion beam parallelism are provided in US application Ser. No. 09 / 588,419, issued June 6, 2000, which is incorporated herein by reference.
[42] It will be appreciated that various techniques for measuring beam parallelism may be used within the scope of the present invention. In addition, the present invention is not limited to use with the scanned ion beam. For example, the present invention can be used with a ribbon ion beam as disclosed in US Pat. No. 5,350,926, issued September 27, 1994 to White et al.
[43] The two-mode implantation technique described above can allow specification for beam parallelism without reducing ion implantation uniformity across the semiconductor wafer surface. Depending on the structure of the ion implanter, ion implantation uniformity can be achieved without requiring optical elements for paralleling the ion beams. In an ion implanter structure comprising an ion optical element for paralleling the ion beam, the requirement for adjusting the parallelism of the ion beam can be relaxed if a fixed parallelizing ion optical element can be used.
[44] While preferred embodiments of the invention have been shown and described, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the scope of the invention as defined in the appended claims.

权利要求:
Claims (28)
[1" claim-type="Currently amended] In the method of implanting ions into the material,
Generating an ion beam;
Measuring an antiparallel angle of the ion beam;
Performing a first injection into the workpiece oriented at a first angle; And
Performing a second injection into the workpiece oriented at a second angle
Including,
And wherein the first and second angles are opposite each other with respect to the reference direction and whose magnitude is greater than or equal to the measured non-parallel angle.
[2" claim-type="Currently amended] The method of claim 1,
Performing the first and second implants are controlled to provide substantially the same ion dose into the workpiece.
[3" claim-type="Currently amended] The method of claim 1,
The non-parallel angle is less than about 5 °.
[4" claim-type="Currently amended] The method of claim 1,
And wherein the non-parallel angle consists of a half angle of the diverging angle of the ion beam.
[5" claim-type="Currently amended] The method of claim 1,
And wherein the non-parallel angle consists of a half angle of the convergence angle of the ion beam.
[6" claim-type="Currently amended] The method of claim 1,
Generating the ion beam using a parallelizing device.
[7" claim-type="Currently amended] The method of claim 1,
Generating the ion beam without using a parallelization device.
[8" claim-type="Currently amended] The method of claim 1,
The reference direction is in the direction of the ion beam in the workpiece.
[9" claim-type="Currently amended] The method of claim 1,
And the reference direction consists of a selected implant angle with respect to the direction of the ion beam in the workpiece.
[10" claim-type="Currently amended] The method of claim 1,
Wherein said first and second angles are equal in size to each other.
[11" claim-type="Currently amended] In the method of implanting ions into a semiconductor wafer,
Generating an ion beam;
Measuring an antiparallel angle of the ion beam;
Tilting the wafer at a first angle;
Performing a first injection at the first angle;
Tilting the wafer at a second angle;
Performing a second injection at the second angle
Including,
And wherein the first and second angles are opposite each other with respect to the reference direction and whose magnitude is greater than or equal to the measured non-parallel angle.
[12" claim-type="Currently amended] The method of claim 11,
Wherein the first and second implants are controlled to provide substantially the same ion dose into the wafer.
[13" claim-type="Currently amended] The method of claim 11,
And wherein the non-parallel angle of the ion beam is less than about 5 °.
[14" claim-type="Currently amended] The method of claim 11,
Wherein said non-parallel angle of said ion beam consists of a half angle of the divergent angle of said ion beam.
[15" claim-type="Currently amended] The method of claim 11,
Wherein said non-parallel angle of said ion beam consists of a half angle of the convergence angle of said ion beam.
[16" claim-type="Currently amended] The method of claim 11,
Generating the ion beam using a parallelizing device.
[17" claim-type="Currently amended] The method of claim 11,
Generating the ion beam without using a parallelization device.
[18" claim-type="Currently amended] The method of claim 11,
The reference direction is in the direction of the ion beam in the wafer.
[19" claim-type="Currently amended] The method of claim 11,
Wherein the reference direction is a selected implant angle with respect to the direction of the ion beam in the wafer.
[20" claim-type="Currently amended] The method of claim 11,
Wherein said first and second angles are equal in size to each other.
[21" claim-type="Currently amended] An apparatus for implanting ions into a semiconductor wafer,
Means for generating an ion beam;
Means for measuring an antiparallel angle of the ion beam;
Means for tilting the wafer at a first angle;
Means for performing a first injection at the first angle;
Means for tilting the wafer at a second angle;
Means for performing a second injection at the second angle
Including,
And said first and second angles are opposite each other with respect to a reference direction and whose magnitude is greater than or equal to the measured non-parallel angle.
[22" claim-type="Currently amended] In the method of implanting ions into a semiconductor wafer,
Generating an ion beam;
Tilting the wafer at a first angle with respect to the ion beam;
Performing a first implant into the wafer tilted at the first angle;
Tilting the wafer at a second angle equal in magnitude and opposite in sign to the first angle; And
Performing a second implant into the wafer tilted at the second angle
How to include.
[23" claim-type="Currently amended] The method of claim 22,
Tilting the wafer at the first angle comprises tilting the wafer at a half angle of divergence angle of the ion beam.
[24" claim-type="Currently amended] The method of claim 22,
Tilting the wafer at the first angle comprises tilting the wafer at a half angle of convergence angle of the ion beam.
[25" claim-type="Currently amended] An apparatus for implanting ions into a semiconductor wafer,
Ion beam generator;
A measurement system for measuring an antiparallel angle of the ion beam; And
Tilt mechanism for tilting the semiconductor wafer at first and second angles
Including,
Wherein the first and second angles are opposite to each other with respect to a reference direction and the magnitude is greater than the measured non-parallel angle, wherein the first and second angle injections are performed at the first and second angles, respectively. .
[26" claim-type="Currently amended] The method of claim 25,
The measuring system includes a movable beam profiler and one or more beam detectors.
[27" claim-type="Currently amended] The method of claim 25,
And an ion optical element for parallelizing the ion beam.
[28" claim-type="Currently amended] The method of claim 25,
Wherein the first and second angles are the same size.

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同族专利:

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公开号 | 公开日

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WO2002037524A3|2003-01-30|

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US6573518B1|2003-06-03|

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KR100844619B1|2008-07-07|

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TWI293767B|2008-02-21|

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EP1330832A2|2003-07-30|

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JP2004517469A|2004-06-10|

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USRE41214E1|2010-04-13|

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WO2002037524A2|2002-05-10|

引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
2000-10-30|Priority to US09/699,653

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2000-10-30|Priority to US09/699,653

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2001-10-11|Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.

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2001-10-11|Priority to PCT/US2001/031658

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2003-05-27|Publication of KR20030042042A

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2008-07-07|Application granted

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2008-07-07|Publication of KR100844619B1

优先权:

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申请号 | 申请日 | 专利标题

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US09/699,653|US6573518B1|2000-10-30|2000-10-30|Bi mode ion implantation with non-parallel ion beams|

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US09/699,653|2000-10-30|

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PCT/US2001/031658|WO2002037524A2|2000-10-30|2001-10-11|Bi mode ion implantation with non-parallel ion beams|